SN74V245-EP datasheet(6/42 Pages) TI1

部品番号	SN74V245-EP

部品情報	DSP-SYNC FIRST-IN, FIRST-OUT MEMORY

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Operating Junction Temperature (°C)

SN74V245-EP

SCAS932A – DECEMBER 2012 – REVISED JANUARY 2013

www.ti.com

ELECTRICAL CHARACTERISTICS

over recommended operating conditions (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VOH

High-level output voltage

VCC = 3 V, IOH = -2 mA

2.4

V

VOL

Low-level output voltage

VCC = 3 V, IOL = 8 mA

0.4

V

II

Input current

VCC = 3.6 V, VI = VCC to 0.4 V

±1

µA

IOZ

High-impedance output current

VCC = 3.6 V, OE ≥ VIH, VO = VCC to 0.4 V

±10

µA

ICC1

Supply current

VCC = 3.3 V, See

(1), (2) and (3)

35

mA

ICC2

VCC = 3.6 V, See

(1) and (4)

5

mA

CIN

Input capacitance

VI = 0, TA = 25°C, f = 1 MHz

10

pF

VO = 0, TA = 25°C, f = 1 MHz, Output

COUT

10

pF

deslected, (OE

≥ VIH)

(1)

Tested with outputs disabled (IOUT = 0).

(2)

RCLK and WCLK switch at 20 MHz and data inputs switch at 10 MHz.

(3)

Typical ICC1 = 2.04 + 0.88 × fSW + 0.02 × CL × fSW (in mA). These equations are valid under the following conditions:

VCC = 3.3 V, TA = 25°C, fSW = WCLK frequency = RCLK frequency (in MHz, using TTL levels), data switching at fSW/2, CL = capacitive

load (in pF).

(4)

All inputs = (VCC – 0.2 V) or (GND + 0.2 V), except RCLK and WCLK, which switch at 20 MHz.

xxx

(1)

See datasheet for absolute maximum and minimum recommended operating conditions.

(2)

Silicon operating life design goal is 100,000 hrs at 106°C junction temperature (does not include package interconnect

life).

(3)

The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the

dominant failure mechanism affecting device wearout for the specific device process and design characteristics.

Figure 1. Electromigration Fail Mode Derating Chart

6

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