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TC281-30 データシート(PDF) 6 Page - Texas Instruments

部品番号 TC281-30
部品情報  PIXEL CCD IMAGE SENSOR
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TC281-30 データシート(HTML) 6 Page - Texas Instruments

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TC281
1036-
× 1010-PIXEL CCD IMAGE SENSOR
SOCS058D – JUNE 1996 – REVISED MARCH 2003
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
IAG
~1
µs
Transfer The
First Line From
SA to AR
Transfer The
Second Line
Adding to The First
Each Additional Pulse
Bins One Additional Line
Serial Line Readout
SAG
TRG
SRG
RST
Figure 5. Special Modes of Operation: Binning
detailed description
The TC281 image sensor consists of five basic functional blocks:
D Image-sensing area
D ALOD
D Storage area
D Serial register
D BCD node with the buffer output amplifier
image-sensing area
The image-sensing area contains 1036 x 1010 pixel elements. A metal light shield covers 28 pixels on the left
edge of the sensing area, 8 pixels on the right edge, and 10 rows at the bottom of the sensing area. The dark
pixel signal is used as a black reference during the video signal processing. The dark references accumulate
the dark current at the same rate as the active photosites, thus representing the true black level signal. As light
enters the active photosites in the image area, electron hole pairs are generated and the electrons are collected
in the potential wells of the pixels. The wells have a finite charge storage capacity determined by the pixel design.
When the generated number of electrons in the illuminated pixels exceeds this limit, the electrons can spill over
into neighboring pixels and cause blooming. To prevent this, each horizontal pair of pixels in the image sensing
area shares a lateral overflow drain structure which provides up to a 1000-to-1 protection against such
undesirable phenomena.
advanced lateral overflow drain
The advanced lateral overflow drain structure is shared by two neighboring pixels and provides several unique
features in the sensor. By varying the dc bias of the drain pin, the blooming protection level can be controlled
and traded for the well capacity.


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