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TCAN1051HGV-Q1 データシート(PDF) 5 Page - Texas Instruments |
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TCAN1051HGV-Q1 データシート(HTML) 5 Page - Texas Instruments |
5 / 35 page 5 TCAN1051H, TCAN1051HV TCAN1051HG, TCAN1051HGV www.ti.com SLLSES8B – MARCH 2016 – REVISED MAY 2016 Product Folder Links: TCAN1051H TCAN1051HV TCAN1051HG TCAN1051HGV Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 7.3 Recommended Operating Conditions MIN MAX UNIT VCC 5-V Bus Supply Voltage Range 4.5 5.5 V VIO I/O Level-Shifting Voltage Range 2.8 5.5 IOH(RXD) RXD terminal HIGH level output current –2 mA IOL(RXD) RXD terminal LOW level output current 2 (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. (2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, High-K board, as specified in JESD51-7, in an environment described in JESD51-2a. (3) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. (4) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC- standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. (5) The junction-to-top characterization parameter, ΨJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7). (6) The junction-to-board characterization parameter, ΨJB estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7). 7.4 Thermal Information THERMAL METRIC(1) TEST CONDITIONS TCAN1051 UNIT D (SOIC) DRB (VSON) 8 Pins 8 Pins RθJA Junction-to-air thermal resistance High-K thermal resistance(2) 105.8 40.2 °C/W RθJB Junction-to-board thermal resistance(3) 46.8 49.7 °C/W RθJC(TO P) Junction-to-case (top) thermal resistance(4) 48.3 15.7 °C/W ΨJT Junction-to-top characterization parameter(5) 8.7 0.6 °C/W ΨJB Junction-to-board characterization parameter(6) 46.2 15.9 °C/W PD Average power dissipation VCC = 5 V, VIO = 5 V (if applicable), TJ = 27°C, RL = 60 Ω, S at 0 V, Input to TXD at 250 kHz, CL_RXD = 15 pF. Typical CAN operating conditions at 500 kbps with 25% transmission (dominant) rate. 52 TBD mW VCC = 5.5 V, VIO = 5.5 V (if applicable), TJ = 150°C, RL = 50 Ω, S at 0 V, Input to TXD at 500 kHz, CL_RXD = 15 pF. Typical high load CAN operating conditions at 1 Mbps with 50% transmission (dominant) rate and loaded network. 124 TBD TTSD Thermal shutdown temperature 170 TBD °C TTSD_HY S Thermal shutdown hysteresis 5 TBD °C |
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