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ES3AB データシート(PDF) 1 Page - Diode Semiconductor Korea

部品番号 ES3AB
部品情報  SURFACE MOUNT RECTIFIERS
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メーカー  DSK [Diode Semiconductor Korea]
ホームページ  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

ES3AB データシート(HTML) 1 Page - Diode Semiconductor Korea

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4 . 5± 0.1 5
1.25± 0.2
0.2± 0.05
5 . 3± 0.2
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic
Terminals: Solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.003 ounces, 0.093 gram
Mounting position: Any
Ratings at 25
 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ES3CB
ES3DB ES3GB
Maximum recurrent peak reverse voltage
VRRM
150
200
400
V
Maximum RMS voltage
VRMS
105
140
280
V
Maximum DC blocking voltage
VDC
150
200
400
V
Maximum average forward rectified current
@TA=100
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
@TJ=125
Maximum instantaneous forward voltage at3.0 A
VF
V
Maximum reverse current
@TA=25
at rated DC blocking voltage
@TA=125
Typical reverse recovery time
(Note1)
trr
ns
Typical junction capacitance
(Note2)
CJ
pF
Typical thermal resistance
R θJA
/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
0.95
1.25
DO-214AA(SMB)
UNITS
- 55 ---- + 150
ES3AB
ES3BB
50
100
A
100
IFSM
IR
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
A
ES3AB--- ES3GB
A
10
Easily cleaned with Alcohol,Isopropanol
and similar solvents
IF(AV)
3.0
SURFACE MOUNT RECTIFIERS
The plastic material carries U/L recognition 94V-0
100
50
70
2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC.
45
35
40
500
VOLTAGE RANGE: 50 --- 400 V
CURRENT:
3.0 A
- 55 ---- + 150
35
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
Dimensions in millimeters
www.diode.kr
Diode Semiconductor Korea


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