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UP04315 データシート(PDF) 2 Page - Panasonic Semiconductor

部品番号 UP04315
部品情報  Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type
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メーカー  PANASONIC [Panasonic Semiconductor]
ホームページ  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

UP04315 データシート(HTML) 2 Page - Panasonic Semiconductor

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UP04315
2
SJJ00268BED
Common characteristics chart
PT  Ta
Characteristics charts of Tr1
IC  VCE
VCE(sat)  IC
hFE  IC
■ Electrical Characteristics (continued) T
a = 25°C ± 3°C
• Tr2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−50
V
Collector-emitter voltage (Base open)
VCEO
IC
= −2 mA, I
B
= 0
−50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
− 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB
= −6 V, I
C
= 0
− 0.01
mA
Forward current transfer ratio
hFE
VCE = −10 V, IC = −5 mA
160
460
Collector-emitter saturation voltage
VCE(sat)
IC = −10 mA, IB = − 0.3 mA
− 0.25
V
Output voltage high level
VOH
VCC
= −5 V, V
B
= − 0.5 V, R
L
= 1 kΩ−4.9
V
Output voltage low level
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ− 0.2
V
Input resistance
R1
−30%
10
+30%
k
Transition frequency
fT
VCB
= −10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Ambient temperature
T
a (°C)
0
140
60
20
80
120
40
100
0
140
120
40
100
80
20
60
012
210
48
6
0
140
20
40
60
80
100
120
Collector-emitter voltage V
CE (V)
IB
= 1.0 mA
0.2 mA
0.4 mA
Ta
= 25°C
0.5 mA
0.3 mA
0.1 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.01
1
0.1
1
10
100
1 000
IC / IB
= 10
Ta
= 75°C
25
°C
−25˚C
Collector current I
C (mA)
0
1
450
10
100
1 000
VCE
= 10 V
50
100
150
200
250
300
350
400
Collector current I
C (mA)
Ta = 75
°C
25
°C
−25°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.


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