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CSD25485F5T データシート(PDF) 3 Page - Texas Instruments |
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CSD25485F5T データシート(HTML) 3 Page - Texas Instruments |
3 / 12 page 3 CSD25485F5 www.ti.com SLPS606 – AUGUST 2016 Product Folder Links: CSD25485F5 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, IDS = –250 μA –20 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = –16 V –100 nA IGSS Gate-to-source leakage current VDS = 0 V, VGS = –12 V –25 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = –250 μA –0.7 –0.95 –1.3 V RDS(on) Drain-to-source on-resistance VGS = –1.8 V, IDS = –0.1 A 89 250 m Ω VGS = –2.5 V, IDS = –0.9 A 51 70 m Ω VGS = –4.5 V, IDS = –0.9 A 35 42 m Ω VGS = –8 V, IDS = –0.9 A 29.7 35 m Ω gfs Transconductance VDS = –2 V, IDS = –0.9 A 7 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = –10 V, ƒ = 1 MHz 410 533 pF Coss Output capacitance 212 276 pF Crss Reverse transfer capacitance 17 23 pF RG Series gate resistance 20 Ω Qg Gate charge total (–4.5 V) VDS = –10 V, IDS = –0.9 A 2.7 3.5 nC Qgd Gate charge gate-to-drain 0.56 nC Qgs Gate charge gate-to-source 0.67 nC Qg(th) Gate charge at Vth 0.40 nC Qoss Output charge VDS = –10 V, VGS = 0 V 4.4 nC td(on) Turnon delay time VDS = –10 V, VGS = –4.5 V, IDS = –0.9 A, RG = 2 Ω 14 ns tr Rise time 6 ns td(off) Turnoff delay time 27 ns tf Fall time 14 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = –0.9 A, VGS = 0 V –0.75 –1 V (1) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. (2) Device mounted on FR4 material with minimum Cu mounting area. 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJA Junction-to-ambient thermal resistance(1) 90 °C/W Junction-to-ambient thermal resistance(2) 245 |
同様の部品番号 - CSD25485F5T |
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同様の説明 - CSD25485F5T |
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