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TLV73318PQDRVRQ1 データシート(PDF) 4 Page - Texas Instruments

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部品番号 TLV73318PQDRVRQ1
部品情報  Capacitor-Free, 300-mA, Low Dropout (LDO) Linear Regulator
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メーカー  TI1 [Texas Instruments]
ホームページ  http://www.ti.com
Logo TI1 - Texas Instruments

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4
TLV733P-Q1
SBVS283A – AUGUST 2016 – REVISED AUGUST 2016
www.ti.com
Product Folder Links: TLV733P-Q1
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating junction temperature range (unless otherwise noted); all voltages are with respect to GND
(1)
MIN
MAX
UNIT
Voltage
VIN
–0.3
6.0
V
VEN
–0.3
VIN + 0.3
VOUT
–0.3
3.6
Current
IOUT
Internally limited
A
Output short-circuit duration
Indefinite
Temperature
Operating junction, TJ
–40
150
°C
Storage, Tstg
–65
160
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic
discharge
Human-body model (HBM), per AEC Q100-002(1)
±2000
V
Charged-device model (CDM), per AEC Q100-011
All pins
±500
Corner pins (1, 3, 4, and 6)
±750
6.3 Recommended Operating Conditions
over operating junction temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input range
1.4
5.5
V
VOUT
Output range
1.0
3.3
V
IOUT
Output current
0
300
mA
VEN
Enable range
0
VIN
V
TJ
Junction temperature
–40
135
°C
TA
Ambient temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
TLV733P-Q1
UNIT
DRV (WSON)
6 PINS
RθJA
Junction-to-ambient thermal resistance
92.5
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
123.9
°C/W
RθJB
Junction-to-board thermal resistance
61.9
°C/W
ψJT
Junction-to-top characterization parameter
9.7
°C/W
ψJB
Junction-to-board characterization parameter
62.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
30.9
°C/W


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