PARAMETER

Collector-Base breakdown voltage

Collector-Emitter

voltage(3)

breakdown

Emitter-Base

voltage

breakdown

Base cutoff current

CONDITIONS

Symbol

V

(BR)CBO

V

CEO

(BR)

V

EBO

(BR)

I

BL

I

CEX

MIN.

TYP.

MAX.

60

40

6.0

50

UNIT

V

V

V

nA

50

Formosa MS

A

o

Off characteristics

I = 10uA, I = 0

cE

I = 1mA, I = 0

cB

I = 10uA, I = 0

cC

Collector cutoff current

V

= 30Vdc, V

= 3.0Vdc

CE

EB

V

= 30Vdc, V

= 3.0Vdc

CE

EB

3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.

PARAMETER

DC current gain

CONDITIONS

Symbol

h

FE

MIN.

TYP.

MAX.

40

70

100

60

UNIT

-

Vdc

30

On characteristics(3)

I = 0.1mA, V

= 1.0V

cCE

I = 1.0mA, V

= 1.0V

cCE

I = 10mA, V

= 1.0V

cCE

I = 50mA, V

= 1.0V

cCE

I = 100mA, V

= 1.0V

cCE

Collector-Emitter saturation voltage(3)

Base-Emitter saturation voltage(3)

I = 10mA, I = 1.0mA

cB

I = 50mA, I = 5.0mA

cB

I = 10mA, I = 1.0mA

cB

I = 50mA, I = 5.0mA

cB

Vdc

0.2

0.3

0.85

0.95

0.65

V

CE(sat)

V

BE(sat)

PARAMETER

Input capacitance

CONDITIONS

Symbol

C

ibo

MIN.

TYP.

MAX.

300

4.0

8.0

1.0

UNIT

-

0.5

Small-signal characteristics

I = 10mA, V

= 20V, f = 1.0MHz

CCE

Output admittance

V

= 5.0V, I = 100uA, RS = 1.0K ohms, f = 1.0KHZ

CE

C

dB

400

40

5.0

h

fe

NF

Current-gain-bandwidth product(4)

Output capacitance

Input impedance

Voltage feeback radio

Small-signal current gain

Noise figure

V

= 5.0V, I = 0, f = 1.0MHz

CB

E

V

= 0.5V, I = 0, f = 1.0MHz

EB

C

V

= 10mA, I = 1.0mA, f = 1.0KHz

CE

C

V

= 10V, I = 1.0mA, f = 1.0KHz

CE

C

V

= 10V, I = 1.0mA, f = 1.0KHz

CE

C

V

= 10V, I = 1.0mA, f = 1.0KHz

CE

C

f

T

C

obo

h

ie

h

re

h

oe

10

8.0

100

1.0

X 10

-4

umhos

pF

kohms

MHz

pF

Page 3

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

PARAMETER

Storage time

CONDITIONS

Symbol

ts

MIN.

TYP.

MAX.

35

200

UNIT

Switching characteristics

Delay time

Rise time

Fall time

V

= 3.0V, V

= -0.5V, I = 10mA, I

= 1.0mA

CC

BE

C

B1

td

tr

tf

50

V

= 3.0V, I =10mA, I

= I

= 1.0mA

CC

C

B1

B2

ns

35

4.f is defined as the frequency at which h extrapolates to unity.

T

fe

FMBT3904DW1 & FMBT3904DW2

Document ID

Issued Date

Revised Date

Revision

Page.

300

DS-231123

2008/02/10

2010/03/10

B

11

Dual NPN Transistor