TPD1E1B04DPYR datasheet(6/17 Pages) TI1

部品番号	TPD1E1B04DPYR

部品情報	1-Channel ESD Protection Diode with Low R(DYN) and Low Clamping Voltage

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Time (Ps)

-10 -5

0

5

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55

0

1

8

2

16

3

24

4

32

5

40

6

48

7

56

D001

Current

Power

Bias Voltage (V)

0

0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7

3

3.3 3.6

0

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

D006

-40qC

25qC

85qC

125qC

Time (ns)

-10

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-10

0

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D003

Time (ns)

-10

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-70

-60

-50

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-10

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10

D004

Voltage (V)

0

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-5

0

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D001

Voltage (V)

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-5

0

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D002

6

TPD1E1B04

SLVSDL0A – MAY 2016 – REVISED JULY 2016

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6.7 Typical Characteristics

Figure 1. Positive TLP Curve

Figure 2. Negative TLP Curve

Figure 3. 8-kV IEC Waveform

Figure 4. –8-kV IEC Waveform

Figure 5. Surge Curve (tp = 8/20 µs), Any IO Pin to GND

Figure 6. Capacitance vs. Bias Voltage

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