TPD4E110

SLVSC54B – JULY 2013 – REVISED APRIL 2014

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7.4 Thermal Information

TPD4E110

UNIT

DPW

(4 TERMINALS)

Junction-to-ambient thermal resistance

291.8

Junction-to-case (top) thermal resistance

224.2

Junction-to-board thermal resistance

245.8

°C/W

Junction-to-top characterization parameter

31.4

Junction-to-board characterization parameter

245.6

Junction-to-case (bottom) thermal resistance

195.4

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

Reverse stand-off voltage

5.5

V

I = 1A, TLP, I/O to GND

10

V

I = 5A, TLP, I/O to GND

13

V

Clamp voltage with ESD strike

I = 1A, TLP, GND to I/O

3

V

I = 5A, TLP, GND to I/O

6

V

Break-down voltage

6.5

7.5

8.5

V

Leakage current

0.02

1

nA

0.8

Ω

Dynamic resistance

0.7

Ω

Line capacitance

0.45

0.55

pF

Channel to channel input

0.003

pF

capacitance

between channel terminals

Variation of channel input

0.05

pF

Channel_x terminal to GND – Channel_y terminal to

capacitance

GND

(1)

4

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