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SI4511DY データシート(PDF) 2 Page - Vishay Siliconix

部品番号 SI4511DY
部品情報  N- and P-Channel 20-V (D-S) MOSFET
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
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SI4511DY データシート(HTML) 2 Page - Vishay Siliconix

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Si4511DY
Vishay Siliconix
www.vishay.com
2
Document Number: 72223
S-41496—Rev. B, 09-Aug-04
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
VGS( h)
VDS = VGS, ID = 250 mA
N-Ch
0.6
1.8
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
P-Ch
−0.6
1.4
V
Gate Body Leakage
IGSS
VDS = 0 V, VGS = "16 V
N-Ch
"100
nA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
P-Ch
"100
nA
VDS = 20 V, VGS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
IDSS
VDS = −16 V, VGS = 0 V
P-Ch
−1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V, TJ = 55_C
N-Ch
5
mA
VDS = −16 V, VGS = 0 V, TJ = 55_C
P-Ch
−5
On State Drain Currentb
ID( )
VDS = 5 V, VGS = 10 V
N-Ch
40
A
On-State Drain Currentb
ID(on)
VDS = −5 V, VGS = −4.5 V
P-Ch
−40
A
VGS = 10 V, ID = 9.6 A
N-Ch
0.0115
0.0145
Drain Source On State Resistanceb
rDS( )
VGS = −4.5 V, ID = −6.2 A
P-Ch
0.022
0.033
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = 4.5 V, ID = 8.6 A
N-Ch
0.0135
0.017
W
VGS = −2.5 V, ID = −5 A
P-Ch
0.035
0.050
Forward Transconductanceb
gf
VDS = 15 V, ID = 9.6 A
N-Ch
33
S
Forward Transconductanceb
gfs
VDS = −15 V, ID = −6.2 A
P-Ch
17
S
Diode Forward Voltageb
VSD
IS = 1.7 A, VGS = 0 V
N-Ch
0.8
1.2
V
Diode Forward Voltageb
VSD
IS = −1.7 A, VGS = 0 V
P-Ch
−0.8
−1.2
V
Dynamica
Total Gate Charge
Q
N-Ch
11.5
18
Total Gate Charge
Qg
N-Channel
P-Ch
17
20
Gate Source Charge
Q
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 9.6 A
N-Ch
3.7
nC
Gate-Source Charge
Qgs
P-Channel
V
10 V V
45 V I
62 A
P-Ch
4.1
nC
Gate Drain Charge
Q d
VDS = −10 V, VGS = −4.5 V, ID = −6.2 A
N-Ch
3.3
Gate-Drain Charge
Qgd
P-Ch
4.3
Turn On Delay Time
td( )
N-Ch
12
20
Turn-On Delay Time
td(on)
NCh
l
P-Ch
25
40
Rise Time
t
N-Channel
VDD = 10 V, RL = 10 W
N-Ch
12
20
Rise Time
tr
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
P-Ch
30
45
Turn Off Delay Time
td( ff)
P-Channel
V
10 V R
10 W
N-Ch
55
85
ns
Turn-Off Delay Time
td(off)
VDD = −10 V, RL = 10 W
ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W
P-Ch
70
105
ns
Fall Time
tf
ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W
N-Ch
15
25
Fall Time
tf
P-Ch
50
75
Source Drain Reverse Recovery Time
t
IF = 1.7 A, di/dt = 100 A/ms
N-Ch
50
100
Source-Drain Reverse Recovery Time
trr
IF = −1.7 A, di/dt = 100 A/ms
P-Ch
40
80
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width v 300 ms, duty cycle v 2%.


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