TPS2832, TPS2833

FAST SYNCHRONOUSBUCK MOSFET DRIVERS

WITH DEADTIME CONTROL

SLVS195C − FEBRUARY 1999 − REVISED JANUARY 2001

3

POST OFFICE BOX 655303

detailed description

low-side driver

The low-side driver is designed to drive low Rds(on) N-channel MOSFETs. The current rating of the driver is

2 A, source and sink.

high-side driver

The high-side driver is designed to drive low Rds(on) N-channel MOSFETs. The current rating of the driver is

2 A, source and sink. The high-side driver can be configured as a ground-reference driver or a floating bootstrap

driver. The internal bootstrap diode, is a Schottky for improved drive efficiency. The maximum voltage that can

be applied between the BOOT terminal and ground is 30 V.

Dead-time control prevents shoot through current from flowing through the main power FETs during switching

transitions by controlling the turn-on times of the MOSFET drivers. The high-side driver is not allowed to turn

on until the gate drive voltage to the low-side FET is low, and the low-side driver is not allowed to turn on until

the voltage at the junction of the power FETs (Vdrain) is low; the DT terminal connects to the junction of the power

FETs.

The IN terminal is a digital terminal that is the input control signal for the drivers. The TPS2832 has a noninverting

input; the TPS2833 has an inverting input.

†High-level input voltages on IN and DT must be greater than or equal to 0.7VCC.