SS14T3 datasheet(2/4 Pages) ONSEMI

部品番号	SS14T3

部品情報	Power MOSFET 170 mAmps, 100 Volts

Download	4 Pages

Scroll/Zoom	100%

メーカー	ONSEMI [ON Semiconductor]

ホームページ	http://www.onsemi.com

Logo

2 / 4 page

BSS123LT1

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0, ID = 250 mAdc)

V(BR)DSS

100

−

Vdc

Zero Gate Voltage Drain Current

(VGS = 0, VDS = 100 Vdc)

TJ = 25°C

TJ = 125°C

IDSS

−

15

60

mAdc

Gate−Body Leakage Current

(VGS = 20 Vdc, VDS = 0)

IGSS

−

50

nAdc

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

VGS(th)

0.8

−

2.8

Vdc

Static Drain−Source On−Resistance

(VGS = 10 Vdc, ID = 100 mAdc)

rDS(on)

−

5.0

6.0

W

Forward Transconductance

(VDS = 25 Vdc, ID = 100 mAdc)

gfs

80

−

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

−

20

−

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Coss

−

9.0

−

pF

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Crss

−

4.0

−

pF

SWITCHING CHARACTERISTICS(4)

Turn−On Delay Time

(VCC = 30 Vdc, IC = 0.28 Adc,

td(on)

−

20

−

ns

Turn−Off Delay Time

(VCC

30 Vdc, IC

0.28 Adc,

VGS = 10 Vdc, RGS = 50 W)

td(off)

−

40

−

ns

REVERSE DIODE

Diode Forward On−Voltage

(ID = 0.34 Adc, VGS = 0 Vdc)

VSD

−

1.3

V

4. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device

Package

Shipping†

BSS123LT1

SOT−23

3,000 Tape & Reel

BSS123LT1G

SOT−23

(Pb−Free)

3,000 Tape & Reel

BSS123LT3

SOT−23

10,000 Tape & Reel

BSS123LT3G

SOT−23

(Pb−Free)

10,000 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

同様の部品番号 - SS14T3

メーカー	部品番号	データシート	部品情報
ON Semiconductor	SS14T3	63Kb / 4P	Surface Mount Schottky Power Rectifier July, 2005 ??Rev. 3
	SS14T3	87Kb / 5P	12 V, 1 A, Low VCE(sat) PNP Transistor September, 2007 - Rev. 0
	SS14T3	64Kb / 4P	Surface Mount Schottky Power Rectifier July, 2005 ??Rev. 3
	SS14T3	88Kb / 6P	12 V, 8.0 A, Low VCE(sat) NPN Transistor May, 2007 - Rev. 1
	SS14T3	63Kb / 6P	12 V, 3 A, Low VCE(sat) PNP Transistor June, 2005 ??Rev. 0

More results

同様の説明 - SS14T3

メーカー	部品番号	データシート	部品情報
ON Semiconductor	BSS123LT1G	115Kb / 5P	Power MOSFET 170 mAmps, 100 Volts November, 2013 ??Rev. 9
	MMBF0201NLT1	86Kb / 8P	Power MOSFET 300 mAmps, 20 Volts November, 2000 ??Rev. 2
	MGSF1P02LT1	82Kb / 8P	Power MOSFET 750 mAmps, 20 Volts November, 2000 ??Rev. 3
Shanghai Leiditech Elec...	LMSS84W	484Kb / 4P	POWER MOSFET 130 mAmps, 50 Volts
First Silicon Co., Ltd	FTK138-AB	585Kb / 4P	POWER MOSFET 200 mAmps, 50 Volts 2022. 04. 28 Revision No : 0
ON Semiconductor	MMBF0202PLT1	88Kb / 8P	Power MOSFET 300 mAmps, 20 Volts November, 2000 ??Rev. 1
Leshan Radio Company	LMGSF1N02LT1	131Kb / 4P	Power MOSFET 750 mAmps, 20 Volts
	LBSS84DW1T1G	569Kb / 5P	Power MOSFET 130 mAmps, 50 Volts
	LBSS84LT1G	313Kb / 6P	Power MOSFET F30 mAmps, 50 Volts
WILLAS ELECTRONIC CORP	BSS138LT1	334Kb / 5P	Power MOSFET 200 mAmps, 50 Volts