SI1022R datasheet(2/4 Pages) VISHAY

部品番号	SI1022R

部品情報	N-Channel 60-V (D-S) MOSFET

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Si1022R

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 71331

S-03049—Rev. A, 05-Feb-01

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 10 mA

60

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 0.25 mA

1

2.5

V

VDS = 0 V, VGS = "10 V

"150

Gate-Body Leakage

IGSS

TJ = 85_C

"500

"

VDS = 0 V, VGS = "5 V

"20

nA

VDS = 50 V, VGS = 0 V

10

Zero Gate Voltage Drain Current

IDSS

TJ = 85_C

100

m

VDS = 60 V, VGS = 0 V

1

mA

VDS = 10 V, VGS = 4.5 V

500

On-State Drain Currenta

ID(on)

VDS = 7.5 V, VGS = 10 V

800

mA

VGS = 4.5 V, ID = 200 mA

3.0

TJ = 125_C

5.0

W

Drain-Source On-Resistancea

rDS(on)

VGS = 10 V, ID = 500 mA

1.25

W

TJ = 125_C

2.25

Forward Transconductancea

gfs

VDS = 10 V, ID = 200 mA

100

mS

Diode Forward Voltagea

VSD

VGS = 0 V, IS = 200 mA

1.30

V

Dynamicb

Input Capacitance

Ciss

30

pF

Output Capacitance

Coss

VDS = 25 V, VGS = 0 V

f = 1 MHz

6

Reverse Transfer Capacitance

Crss

f = 1 MHz

2.5

nC

Gate Charge

Qg

VDS =10 V, ID = 250 mA

VGS = 4.5 V

0.6

nC

Switchingb, c

Turn-On Time

t(on)

VDD = 30 V, RL = 150 W

25

Turn-Off Time

t(off)

ID = 200 mA, VGEN = 10 V

RG = 10 W

35

ns

Notes

a.

Pulse test: PW

v300 ms duty cycle v2%.

TNJO60

b.

For DESIGN AID ONLY, not subject to production testing.

c.

Switching time is essentially independent of operating temperature.

同様の部品番号 - SI1022R

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI1022R	93Kb / 5P	N-Channel 60-V (D-S) MOSFET S-81543-Rev. B, 07-Jul-08
	SI1022R	156Kb / 7P	N-Channel 60 V (D-S) MOSFET Rev. F, 22-Nov-10
	SI1022R	156Kb / 8P	N-Channel 60 V (D-S) MOSFET Rev. F, 22-Nov-10
Vishay Telefunken	SI1022R	156Kb / 8P	N-Channel 60 V (D-S) MOSFET
Vishay Siliconix	SI1022R	154Kb / 7P	N-Channel 60 V (D-S) MOSFET Rev. F, 22-Nov-10

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同様の説明 - SI1022R

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