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SI3460DV-T1 データシート(PDF) 2 Page - Vishay Siliconix |
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SI3460DV-T1 データシート(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si3460DV Vishay Siliconix www.vishay.com 2 Document Number: 71329 S-31725—Rev. b, 18-Aug-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 0.45 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 70_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 20 A VGS = 4.5 V, ID = 5.1 A 0.023 0.027 Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 4.7 A 0.027 0.032 W VGS = 1.8 V, ID = 2 A 0.032 0.038 Forward Transconductancea gfs VDS = 10 V, ID = 5.1 A 25 S Diode Forward Voltagea VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg 13.5 20 Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 5.1 A 2.3 nC Gate-Drain Charge Qgd 2.2 Gate Resistance Rg 0.5 2.9 W Turn-On Delay Time td(on) 15 30 Rise Time tr VDD = 10 V, RL = 10 W 30 60 Turn-Off Delay Time td(off) VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 70 140 ns Fall Time tf 30 60 Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/ms 40 80 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 4 8 12 16 20 0.0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS = 5 thru 2 V TC = -55_C 125_C 1 V 25_C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 1.5 V |
同様の部品番号 - SI3460DV-T1 |
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