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TLE4963-2M データシート(PDF) 11 Page - Infineon Technologies AG

部品番号 TLE4963-2M
部品情報  High Precision Automotive Hall Effect Latch for 5V Applications
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メーカー  INFINEON [Infineon Technologies AG]
ホームページ  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE4963-2M データシート(HTML) 11 Page - Infineon Technologies AG

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Data Sheet
11
Revision 1.0 2016-01-12
TLE4963-2M
Specification
3.2
Absolute Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Calculation of the dissipated power PDIS and junction temperature TJ of the chip (SOT23 example):
e.g. for: VDD = 5 V, IS = 2 mA, VQSAT = 0.5 V, IQ = 1 mA
Power dissipation: PDIS = 5 V x 2 mA + 0.5 V x 1 mA = 10 mW + 0.5 mW = 10.5 mW
Temperature ΔT = RthJA x PDIS = 300 K/W x 10.5 mW = 3.15 K
For TA = 150 °C: TJ = TA + ΔT = 150 °C + 3.15 K = 153.15 °C
Table 3
Absolute Maximum Rating Parameters
Parameter
Symbol
Values
Unit
Note or Test Condition
Min.
Typ.
Max.
Supply voltage
VDD
-0.3
6
V
Output voltage
VQ
-0.5
6
V
Junction
temperature1)
1) This lifetime statement is an anticipation based on an extrapolation of Infineon’s qualification test results. The actual
lifetime of a component depends on its form of application and type of use etc. and may deviate from such statement.
The lifetime statement shall in no event extend the agreed warranty period.
TJ
-40
155
165
175
195
°C
for 2000h (not additive)
for 1000h (not additive)
for 168h (not additive)
for 3 x 1h (additive)
Thermal resistance
Junction ambient
RthJA
300
K/W
for PG-SOT23-3-15 (2s2p)
Thermal resistance
Junction lead
RthJL
100
K/W
for PG-SOT23-3-15
Table 4
ESD Protection1) (TA = 25°C)
1) Characterization of ESD is carried out on a sample basis, not subject to production test.
Parameter
Symbol
Values
Unit
Note or Test Condition
Min.
Typ.
Max.
ESD voltage (HBM)2)
2) Human Body Model (HBM) tests according to ANSI/ESDA/JEDEC JS-001.
VESD
-4
4
kV
R = 1.5 kΩ, C = 100 pF
ESD voltage (CDM)3)
3) Charged Device Model (CDM), ESD susceptibility according to JEDEC JESD22-C101.
-1
1
kV


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