BF1205C datasheet(2/22 Pages) PHILIPS

部品番号	BF1205C

部品情報	Dual N-channel dual gate MOS-FET

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メーカー	PHILIPS [NXP Semiconductors]

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9397 750 13005

Product data sheet

Rev. 01 — 18 May 2004

2 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

1.4 Quick reference data

[1]

Ts is the temperature at the soldering point of the source lead.

2.

Pinning information

Table 1:

Quick reference data

Per MOS-FET unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max Unit

VDS

drain-source voltage

-

6

V

ID

drain current (DC)

-

30

mA

Ptot

total power dissipation

Ts ≤ 107 °C

[1] -

-

180

mW

yfs

forward transfer admittance

f = 1 MHz

ampliﬁer a; ID =19mA

26

31

41

mS

ampliﬁer b; ID =13mA

28

33

43

mS

Cig1-ss

input capacitance at gate 1

f = 1 MHz

ampliﬁer a

-

2.2

2.7

pF

ampliﬁer b

-

2.0

2.5

pF

Crss

reverse transfer capacitance f = 1 MHz

-

20

-

fF

NF

noise ﬁgure

ampliﬁer a; f = 400 MHz

-

1.3

1.9

dB

ampliﬁer b; f = 800 MHz

-

1.4

2.1

dB

Xmod

cross-modulation

input level for k = 1% at

40 dB AGC

ampliﬁer a

100

105

-

dB

µV

ampliﬁer b

100

103

-

dB

µV

Tj

junction temperature

-

150

°C

Table 2:

Discrete pinning

Description

Simpliﬁed outline

Symbol

1

gate 1 (a)

2

gate 2

3

gate 1 (b)

4

drain (b)

5

source

6

drain (a)

001aaa706

1

2

3

6

5

4

sym033

g1

(b)

g1

(a)

g2

s

d

(a)

d

(b)

AMP b

AMP a

同様の部品番号 - BF1205C

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同様の説明 - BF1205C

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