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BF1205C データシート(PDF) 2 Page - NXP Semiconductors |
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BF1205C データシート(HTML) 2 Page - NXP Semiconductors |
2 / 22 page 9397 750 13005 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 18 May 2004 2 of 22 Philips Semiconductors BF1205C Dual N-channel dual gate MOS-FET 1.4 Quick reference data [1] Ts is the temperature at the soldering point of the source lead. 2. Pinning information Table 1: Quick reference data Per MOS-FET unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage - - 6 V ID drain current (DC) - - 30 mA Ptot total power dissipation Ts ≤ 107 °C [1] - - 180 mW yfs forward transfer admittance f = 1 MHz amplifier a; ID =19mA 26 31 41 mS amplifier b; ID =13mA 28 33 43 mS Cig1-ss input capacitance at gate 1 f = 1 MHz amplifier a - 2.2 2.7 pF amplifier b - 2.0 2.5 pF Crss reverse transfer capacitance f = 1 MHz - 20 - fF NF noise figure amplifier a; f = 400 MHz - 1.3 1.9 dB amplifier b; f = 800 MHz - 1.4 2.1 dB Xmod cross-modulation input level for k = 1% at 40 dB AGC amplifier a 100 105 - dB µV amplifier b 100 103 - dB µV Tj junction temperature - - 150 °C Table 2: Discrete pinning Pin Description Simplified outline Symbol 1 gate 1 (a) 2 gate 2 3 gate 1 (b) 4 drain (b) 5 source 6 drain (a) 001aaa706 1 2 3 6 5 4 sym033 g1 (b) g1 (a) g2 s d (a) d (b) AMP b AMP a |
同様の部品番号 - BF1205C |
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同様の説明 - BF1205C |
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