データシートサーチシステム |
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MTB013N10RH8 データシート(PDF) 4 Page - Cystech Electonics Corp. |
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MTB013N10RH8 データシート(HTML) 4 Page - Cystech Electonics Corp. |
4 / 10 page CYStech Electronics Corp. Spec. No. : C056H8 Issued Date : 2016.08.29 Revised Date : Page No. : 4/10 MTB013N10RH8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 10 20 30 40 50 02 46 8 10 Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10V, 9V, 8V,7V,6V VDS, Drain-Source Voltage(V) 5 4V 3.5V 3V V =2.5V GS ID=250μA, V =0V GS Static Drain-Source On-State resistance vs Drain Current 1 10 100 0.1 1 10 100 ID, Drain Current(A) VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 02468 10 12 14 16 18 20 IDR, Reverse Drain Current(A) VGS=0V Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 10 20 30 40 50 60 70 80 90 100 02 4 6 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS, Gate-Source Voltage(V) ID=15A VGS=10V, ID=15A RDS(ON)@Tj=25°C : 9.8mΩ typ. |
同様の部品番号 - MTB013N10RH8 |
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同様の説明 - MTB013N10RH8 |
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