TLV2316IDR datasheet(11/37 Pages) TI1

部品番号	TLV2316IDR

部品情報	10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifiers

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30

40

50

60

70

±75

±50

±25

0

25

50

75

100

125

150

Temperature (

ƒC)

C001

I

SC, Source

I

SC, Sink

0

20

40

60

80

100

10M

100M

1G

10G

Frequency (Hz)

C036

Time (200 ns/div)

CL = 10 pF

CL = 100 pF

C030

CL

RL

±

+

VIN = 100 mVpp

+ 2.75 V

± 2.75 V

Device

+

±

C

L = 10 pF

C

L = 100 pF

Time (100 ns/div)

C031

CL

RL

±

+

VIN = 1 Vpp

+ 2.75 V

± 2.75 V

Device

+

±

V

OUT

V

IN

0

10

20

30

40

50

0p

100p

200p

300p

Capacitive Load (F)

C025

±

+

RI = 1 kohm

VIN = 100 mVpp

+ 2.75 V

± 2.75 V

CL

Device

+

±

RF = 1 kohm

Time (100 s/div)

C027

V

OUT

V

IN

6.1 VPP

Sine Wave

±

+

VOUT

+ 2.75 V

± 2.75 V

Device

+

±

11

TLV316, TLV2316, TLV4316

www.ti.com

SBOS752A – FEBRUARY 2016 – REVISED SEPTEMBER 2016

Product Folder Links: TLV316 TLV2316 TLV4316

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Typical Characteristics (continued)

at TA = 25°C, VS = 5.5 V, RL = 10 kΩ connected to VS / 2, VCM = VS / 2, and VOUT = VS / 2 (unless otherwise noted)

V+ = 2.75 V, V– = –2.75 V, G = –1 V/V

Figure 7. Small-Signal Overshoot vs Load Capacitance

V+ = 2.75 V, V– = –2.75 V

Figure 8. No Phase Reversal

V+ = 2.75 V, V– = –2.75 V, G = 1 V/V

Figure 9. Small-Signal Step Response

V+ = 2.75 V, V– = –2.75 V, CL = 100 pF, G = 1 V/V

Figure 10. Large-Signal Step Response

Figure 11. Short-Circuit Current vs Temperature

PRF = –10 dBm

Figure 12. Electromagnetic Interference Rejection Ratio

Referred to Noninverting Input vs Frequency

同様の部品番号 - TLV2316IDR

メーカー	部品番号	データシート	部品情報
Texas Instruments	TLV2316IDR	1Mb / 35P	[Old version datasheet] 10-MHz, Rail-to-Rail Input/Output, Low-Voltage

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