SI1032R-T1 datasheet(1/4 Pages) VISHAY

部品番号	SI1032R-T1

部品情報	N-Channel 20-V (D-S) MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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1.5-V Rated

Si1032R/X

Vishay Siliconix

Document Number: 71172

S-40574—Rev. C, 29-Mar-04

www.vishay.com

1

N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (mA)

5 @ VGS = 4.5 V

200

20

7 @ VGS = 2.5 V

175

20

9 @ VGS = 1.8 V

150

10 @ VGS = 1.5 V

50

FEATURES

BENEFITS

APPLICATIONS

D Low-Side Switching

D Low On-Resistance: 5 W

D Low Threshold: 0.9 V (typ)

D Fast Switching Speed: 35 ns

D 1.8-V Operation

D Gate-Source ESD Protection

D Ease in Driving Switches

D Low Offset (Error) Voltage

D Low-Voltage Operation

D High-Speed Circuits

D Low Battery Voltage Operation

D Drivers: Relays, Solenoids, Lamps,

Hammers, Displays, Memories

D Battery Operated Systems

D Power Supply Converter Circuits

D Load/Power Switching Cell Phones, Pagers

Ordering Information:

SC-75A (SOT-416): Si1032R-T1

SC-75A (SOT-416): Si1032R-T1—E3 (Lead Free)

SC-89 (SOT-490): Si1032X-T1

SC-89 (SOT-490): Si1032X-T1—E3 (Lead Free)

Top View

2

1

S

D

G

3

Marking Code: G

SC-75A or SC-89

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si1032R

Si1032X

Parameter

Symbol

5 secs

Steady State

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

"6

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

200

140

210

200

Continuous Drain Current (TJ = 150_C)a

TA = 85_C

ID

110

100

150

140

mA

Pulsed Drain Currenta

IDM

500

600

mA

Continuous Source Current (diode conduction)a

IS

250

200

300

240

Maximum Power Dissipationa for SC 75

TA = 25_C

PD

280

250

340

300

mW

Maximum Power Dissipationa for SC-75

TA = 85_C

PD

145

130

170

150

mW

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

Gate-Source ESD Rating (HBM, Method 3015)

ESD

2000

V

Notes

c.

Surface Mounted on FR4 Board.

同様の部品番号 - SI1032R-T1

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI1032R-T1-E3	121Kb / 5P	N-Channel 1.5-V (G-S) MOSFET Rev. E, 07-Jul-08
	SI1032R-T1-GE3	121Kb / 5P	N-Channel 1.5-V (G-S) MOSFET Rev. E, 07-Jul-08
	SI1032R-T1-GE3	199Kb / 9P	N-Channel 1.5 V (G-S) MOSFET Rev. F, 08-Nov-10

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