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LM12CLK データシート(PDF) 2 Page - National Semiconductor (TI) |
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LM12CLK データシート(HTML) 2 Page - National Semiconductor (TI) |
2 / 14 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Total Supply Voltage (Note 1) 80V Input Voltage (Note 2) Output Current Internally Limited Junction Temperature (Note 3) Storage Temperature Range −65˚C to 150˚C Lead Temperature (Soldering, 10 seconds) 300˚C Operating Ratings Total Supply Voltage 15V to 60V Case Temperature (Note 4) 0˚C to 70˚C Electrical Characteristics (Note 4) Parameter Conditions Typ 25˚C LM12CL Units Limits Input Offset Voltage ±10V ≤ V S ≤ ±0.5 VMAX,VCM = 0 2 15/20 mV (max) Input Bias Current V− + 4V ≤ V CM ≤ V+ −2V 0.15 0.7/1.0 µA (max) Input Offset Current V− +4V ≤ V CM ≤ V+ −2V 0.03 0.2/0.3 µA (max) Common Mode V− +4V ≤ V CM ≤ V+ −2V 86 70/65 dB (min) Rejection Power Supply V+ = 0.5 V MAX, 90 70/65 dB (min) Rejection −6V ≥ V− ≥ −0.5 V MAX V− = −0.5 V MAX, 110 75/70 dB (min) 6V ≤ V+ ≤ 0.5 V MAX Output Saturation t ON = 1 ms, Threshold ∆V IN = 5(10 ) mV, I OUT = 1A 1.8 2.2/2.5 V (max) 8A 4 5/7 V (max) 10A 5 V (max) Large Signal Voltage t ON = 2 ms, Gain V SAT = 2V, IOUT = 0 100 30/20 V/mV (min) V SAT = 8V, RL = 4Ω 50 15/10 V/mV (min) Thermal Gradient P DISS = 50W, tON = 65 ms 30 100 µV/W (max) Feedback Output-Current Limit t ON = 10 ms, VDISS = 10V 13 16 A (max) t ON = 100 ms, VDISS = 58V 1.5 0.9/0.6 A (min) 1.5 1.7 A (max) Power Dissipation t ON = 100 ms, VDISS = 20V 100 80/55 W (min) Rating V DISS = 58V 80 52/35 W (min) DC Thermal Resistance (Note 5) V DISS = 20V 2.3 2.9 ˚C/W (max) V DISS = 58V 2.7 4.5 ˚C/W (max) AC Thermal Resistance (Note 5) 1.6 2.1 ˚C/W (max) Supply Current V OUT = 0, IOUT = 0 60 120/140 mA (max) Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. The maximum voltage for which the LM12 is guaranteed to operate is given in the operating ratings and in Note 4. With inductive loads or output shorts, other restrictions described in applications section apply. Note 2: Neither input should exceed the supply voltage by more than 50 volts nor should the voltage between one input and any other terminal exceed 60 volts. Note 3: Operating junction temperature is internally limited near 225˚C within the power transistor and 160˚C for the control circuitry. Note 4: The supply voltage is ±30V (VMAX = 60V), unless otherwise specified. The voltage across the conducting output transistor (supply to output) is VDISS and internal power dissipation is PDISS. Temperature range is 0˚C ≤ TC ≤ 70˚C where TC is the case temperature. Standard typeface indicates limits at 25˚C while bold- face type refers to limits or special conditions over full temperature range. With no heat sink, the package will heat at a rate of 35˚C/sec per 100W of internal dissipation. Note 5: This thermal resistance is based upon a peak temperature of 200˚C in the center of the power transistor and a case temperature of 25˚C measured at the center of the package bottom. The maximum junction temperature of the control circuitry can be estimated based upon a dc thermal resistance of 0.9˚C/W or an ac thermal resistance of 0.6˚C/W for any operating voltage. Although the output and supply leads are resistant to electrostatic discharges from handling, the input leads are not. The part should be treated accordingly. www.national.com 2 |
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