データシートサーチシステム |
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4N10-220 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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4N10-220 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 4N10 · FEATURES · Drain Current ID= 4A@ TC=25℃ · Drain Source Voltage- : VDSS= 100V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) · Fast Switching · APPLICATIONS · Switching power supplies,converters,AC and DC motor controls · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Plused 16 A PD Total Dissipation @TC=25℃ 20 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.63 ℃ /W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃ /W |
同様の部品番号 - 4N10-220 |
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同様の説明 - 4N10-220 |
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