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BD246A データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD246A データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION · Collector Current -IC= -10A · Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C · Complement to Type BD245/A/B/C APPLICATIONS · Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage (RBE= 100Ω) BD246 -55 V BD246A -70 BD246B -90 BD246C -115 VCEO Collector-Emitter Voltage BD246 -45 V BD246A -60 BD246B -80 BD246C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current -3 A PC Collector Power Dissipation @ Ta=25℃ 3 W Collector Power Dissipation @ TC=25℃ 80 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.56 ℃ /W |
同様の部品番号 - BD246A |
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同様の説明 - BD246A |
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