SI2301DS-T1 datasheet(1/4 Pages) VISHAY

部品番号	SI2301DS-T1

部品情報	P-Channel 1.25-W, 2.5-V MOSFET

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Si2301DS

Vishay Siliconix

Document Number: 70627

S-31990—Rev. E, 13-Oct-03

www.vishay.com

1

P-Channel 1.25-W, 2.5-V MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

20

0.130 @ VGS = -4.5 V

-2.3

-20

0.190 @ VGS = -2.5 V

-1.9

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

Si2301DS (A1)*

*Marking Code

Ordering Information: Si2301DS-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

"8

V

Continuous Drain Current (TJ = 150_C)b

TA= 25_C

ID

-2.3

Continuous Drain Current (TJ = 150_C)b

TA= 70_C

ID

-1.5

A

Pulsed Drain Currenta

IDM

-10

A

Continuous Source Current (Diode Conduction)b

IS

-1.6

Power Dissipationb

TA= 25_C

PD

1.25

W

Power Dissipationb

TA= 70_C

PD

0.8

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambientb

R

100

_C/W

Maximum Junction-to-Ambientc

RthJA

166

_C/W

Notes

a.

Pulse width limited by maximum junction temperature.

b.

Surface Mounted on FR4 Board, t v 5 sec.

c.

Surface Mounted on FR4 Board.

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同様の部品番号 - SI2301DS-T1

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