データシートサーチシステム |
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MTB9D0N10RQ8-0-T3-G データシート(PDF) 4 Page - Cystech Electonics Corp. |
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MTB9D0N10RQ8-0-T3-G データシート(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 4/9 MTB9D0N10RQ8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 5 10 15 20 25 30 35 40 45 50 02 4 68 10 VDS, Drain-Source Voltage(V) 10V,9V,8V,7V,6V,5V,4V,3.5V VGS=3V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 1 10 0.1 1 10 100 ID, Drain Current(A) VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.0 1.2 02 46 8 1 IDR, Reverse Drain Current(A) Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 10 20 30 40 50 60 70 80 90 100 02 46 8 10 0 Tj=25°C Tj=150°C Drain-Source On-State Resistance vs Junction Tempearture 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=10V, ID=11.5A RDS(ON)@Tj=25°C : 5.6mΩ typ. VGS, Gate-Source Voltage(V) ID=11.5A |
同様の部品番号 - MTB9D0N10RQ8-0-T3-G |
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同様の説明 - MTB9D0N10RQ8-0-T3-G |
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