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MTB013N10RJ3-0-T3-G データシート(PDF) 2 Page - Cystech Electonics Corp. |
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MTB013N10RJ3-0-T3-G データシート(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : 2/ 9 MTB013N10RJ3 CYStek Product Specification Absolute Maximum Ratings (TC=25 °C) Parameter Symbol Limits Unit Drain-Source Voltage (Note 1) VDS 100 Gate-Source Voltage VGS ±20 V Continuous Drain Current @TC=25 °C, VGS=10V (Note 1) 42 Continuous Drain Current @TC=100 °C, VGS=10V (Note 1) ID 29.7 Continuous Drain Current @TA=25 °C, VGS=10V (Note 4) 9 Continuous Drain Current @TA=70 °C, VGS=10V (Note 4) IDSM 7.2 Pulsed Drain Current @ VGS=10V (Note 3) IDM 168 Avalanche Current @L=0.1mH (Note 5) IAS 42 A Single Pulse Avalanche Energy @ L=0.5mH, ID=33 Amps, VDD=50V (Note 5) EAS 272 mJ TC=25 °C (Note 1) 60 TC=100 °C (Note 1) PD 30 TA=25 °C (Note 2) 2.5 Power Dissipation TA=70 °C (Note 2) PDSM 1.6 W Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C/W *Drain current limited by maximum junction temperature Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.5 Thermal Resistance, Junction-to-ambient, max (Note2) 50 Thermal Resistance, Junction-to-ambient, max (Note4) RθJA 110 °C/W Note : 1 .The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3 . Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. 5. 100% tested by condition of VDD=25V, ID=10A, L=2mH, VGS=10V. |
同様の部品番号 - MTB013N10RJ3-0-T3-G |
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同様の説明 - MTB013N10RJ3-0-T3-G |
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