2N3789 datasheet(2/2 Pages) ISC

部品番号	2N3789

部品情報	isc Silicon PNP Power Transistor

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2

isc Silicon PNP Power Transistor

2N3789

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)*

Collector-Emitter Sustaining Voltage

IC=-200mA; IB= 0

-60

V

IEBO

Emitter Cutoff Current

VEB= -7V; IC= 0

-5

mA

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -4A; IB=- 0.4A

-1.0

V

VBE(ON)-1

Base-Emitter On Voltage

IC=-5A; VCE=-2V

-2.0

V

VBE(ON)-2

Base-Emitter On Voltage

IC=-10A; VCE=-4V

-4.0

V

hFE-1

DC Current Gain

IC= -1A; VCE= -2V

25

90

hFE-2

DC Current Gain

IC= -3A; VCE= -2V

15

fT

Current Gain-Bandwidth Product

IC= -0.5A; VCE= -10V; f= 1.0MHz

4

MHz

*:Pulse test:Pulse width=300us,duty cycle≤2%

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