IRF9620S datasheet(4/8 Pages) VISHAY

部品番号	IRF9620S

部品情報	Power MOSFET

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Document Number: 91083

4

S11-1051-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9620S, SiHF9620S

Vishay Siliconix

Fig. 6 - Typical Transconductance vs. Drain Current

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Breakdown Voltage vs. Temperature

Fig. 9 - Normalized On-Resistance vs. Temperature

Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage

4.0

ID, Drain Current (A)

- 1

- 2

- 3

- 4

- 5

0

T

J = 25 °C

T

J = - 55 °C

91083_06

T

J = 125 °C

80 µs Pulse Test

V

DS > ID(on) x RDS(on) max.

3.2

2.4

1.6

0.8

0.0

T

J = 25 °C

T

J = 150 °C

- 20

VSD, Source-to-Drain Voltage (V)

- 2.0

- 6.8

- 5.6

- 4.4

- 3.2

91083_07

- 0.1

- 0.2

- 1.0

- 2

- 5

- 10

- 8.0

- 0.5

91083_08

TJ, Junction Temperature (°C)

1.25

1.15

0.75

0.85

0.95

1.05

- 40

160

120

80

40

0

91083_09

TJ, Junction Temperature (°C)

2.5

2.0

0.0

0.5

1.0

1.5

- 40

160

120

80

40

0

I

D = - 1.0 A

V

GS = - 10 V

91083_10

VDS, Drain-to-Source Voltage (V)

500

0

100

200

300

400

0

- 50

- 40

- 30

- 20

- 10

C

iss

C

rss

C

oss

V

GS = 0 V, f = 1 MHz

C

iss = Cgs + Cgd, Cds Shorted

C

rss = Cgd

C

oss = Cds +

C

gs, Cgd

C

gs + Cgd

≈ C

gs + Cgd

QG, Total Gate Charge (nC)

20

16

12

8

0

4

04

16

12

8

V

DS = - 40 V

V

DS = - 60 V

For test circuit

see figure 18

V

DS = - 100 V

91083_11

I

D = - 3.5 A

20

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