2

TC6215

Sym

Parameter

Min

Typ

Max

Units

Conditions

BV

DSS

Drain-to-source breakdown voltage

150

-

-

V

V

V

GS(th)

Gate threshold voltage

1.0

-

2.0

V

V

ΔV

GS(th)

Change in V

-

-

-4.5

V

VZ

GS

Gate-source back to back Zener voltage

±14

-

±25

V

I

I

DSS

Zero gate voltage drain current

-

-

5.0

µA

V

-

-

1.0

mA

V

V

I

D(ON)

On-state drain current

-

2.0

-

A

V

-

3.8

-

V

R

DS(ON)

Static drain-to-source on-state resistance

-

-

4.0

Ω

V

-

-

5.0

V

-

-

4.0

V

ΔR

DS(ON)

Change in R

-

-

1.0

V

G

FS

Forward transconductance

560

-

-

mmho

V

C

ISS

Input capacitance

-

120

-

pF

V

V

f = 1.0MHz

C

OSS

Common source output capacitance

-

33

-

C

RSS

Reverse transfer capacitance

-

11

-

t

d(ON)

Turn-on delay time

-

2.5

-

ns

V

I

R

t

r

Rise time

-

2.3

-

t

d(OFF)

Turn-off delay time

-

17.2

-

t

f

Fall time

-

11.3

-

V

SD

Diode forward voltage drop

-

-

1.4

V

V

t

rr

Reverse recovery time

-

90

-

ns

V

N-Channel Switching Waveforms and Test Circuit

R

GEN

Input

Pulse

Generator

V

DD

R

L

D.U.T.

OUTPUT

10V

0V

0V

Input

Output

10%

90%

90%

10%

90%

10%

Notes:

All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)

All AC parameters sample tested.

1.

2.