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CAT25256YE-GT3 データシート(PDF) 2 Page - ON Semiconductor

部品番号 CAT25256YE-GT3
部品情報  256-Kb SPI Serial CMOS EEPROM
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT25256YE-GT3 データシート(HTML) 2 Page - ON Semiconductor

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Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
NEND (Note 3, 4)
Endurance
1,000,000
Program / Erase Cycles
TDR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, VCC = 5 V, 25°C.
4. The new product revision (E) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when
a single byte has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order
to benefit from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS − MATURE PRODUCT
(VCC = 1.8 V to 5.5 V, TA = −40°C to +85°C and VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICCR
Supply Current
(Read Mode)
Read, VCC = 5.5 V,
SO open
10 MHz / −40
°C to 85°C
2
mA
5 MHz / −40
°C to 125°C
2
mA
ICCW
Supply Current
(Write Mode)
Write, VCC = 5.5 V,
SO open
10 MHz / −40
°C to 85°C
4
mA
5 MHz / −40
°C to 125°C
4
mA
ISB1
Standby Current
VIN = GND or VCC, CS = VCC,
WP = VCC, HOLD = VCC,
VCC = 5.5 V
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
3
mA
ISB2
Standby Current
VIN = GND or VCC, CS = VCC,
WP = GND, HOLD = GND,
VCC = 5.5 V
TA = −40°C to +85°C
4
mA
TA = −40°C to +125°C
5
mA
IL
Input Leakage Current
VIN = GND or VCC
−2
2
mA
ILO
Output Leakage
Current
CS = VCC,
VOUT = GND or VCC
TA = −40°C to +85°C
−1
1
mA
TA = −40°C to +125°C
−1
2
mA
VIL
Input Low Voltage
−0.5
0.3 VCC
V
VIH
Input High Voltage
0.7 VCC
VCC + 0.5
V
VOL1
Output Low Voltage
VCC > 2.5 V, IOL = 3.0 mA
0.4
V
VOH1
Output High Voltage
VCC > 2.5 V, IOH = −1.6 mA
VCC − 0.8 V
V
VOL2
Output Low Voltage
VCC > 1.8 V, IOL = 150 mA
0.2
V
VOH2
Output High Voltage
VCC > 1.8 V, IOH = −100 mA
VCC − 0.2 V
V


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