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SI4214DDY-T1-E3 データシート(PDF) 4 Page - Vishay Siliconix |
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SI4214DDY-T1-E3 データシート(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 67907 S11-0653-Rev. A, 11-Apr-11 Vishay Siliconix Si4214DDY-T1-E3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =5mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.02 0.04 0.06 0.08 0.10 012 345 67 8 910 TJ = 25 °C ID = 8 A TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 10 20 30 40 50 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 1ms 10 ms 0.1 1 10 10 TA = 25 °C Single Pulse Limited byRDS(on)* 1s 10 s DC BVDSS Limited 100 ms VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
同様の部品番号 - SI4214DDY-T1-E3 |
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同様の説明 - SI4214DDY-T1-E3 |
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