SI4228DY-T1-E3 datasheet(5/9 Pages) VISHAY

部品番号	SI4228DY-T1-E3

部品情報	Dual N-Channel 25 V (D-S) MOSFET

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5 / 9 page

Document Number: 67908

S11-0653-Rev. A, 11-Apr-11

www.vishay.com

5

Vishay Siliconix

Si4228DY-T1-E3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

3

6

9

12

0

25

50

75

100

125

150

Package Limited

TC - Case Temperature (°C)

Power, Junction-to-Foot

0

1

2

3

4

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.3

0.6

0.9

1.2

1.5

0

25

50

75

100

125

150

TA - Ambient Temperature (°C)

同様の部品番号 - SI4228DY-T1-E3

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VBsemi Electronics Co.,...	SI4228DY-T1-E3	985Kb / 7P	Dual N-Channel 20-V (D-S) MOSFET

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同様の説明 - SI4228DY-T1-E3

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Vishay Siliconix	SI4952DY	176Kb / 9P	Dual N-Channel 25-V (D-S) MOSFET Rev. C, 04-May-09
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