SI9803DY datasheet(4/4 Pages) VISHAY

部品番号	SI9803DY

部品情報	P-Channel Reduced Qg Fast Switching MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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Si9803DY

Vishay Siliconix

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4

Document Number: 70638

S-49559—Rev. C, 11-Feb-98

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

Single Pulse Power

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

VSD – Source-to-Drain Voltage (V)

VGS – Gate-to-Source Voltage (V)

TJ – Temperature (_C)

Time (sec)

–0.4

–0.2

0.0

0.2

0.4

0.6

0.8

–50

0

50

100

150

0

0.03

0.06

0.09

0.12

0.15

0

246

8

TJ = 150_C

TJ = 25_C

2

1

0.1

0.01

ID = 5.9 A

ID = 250 mA

0

0.4

10

0.8

1.2

1.0

1.4

1

10–3

10–2

110

30

10–1

10–4

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 50_C/W

3. TJM – TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

0.01

0

0.1

80

100

20

40

60

110

30

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

40

0.2

0.6

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