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74LVC4066PW データシート(PDF) 5 Page - NXP Semiconductors |
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74LVC4066PW データシート(HTML) 5 Page - NXP Semiconductors |
5 / 23 page 2003 Aug 12 5 Philips Semiconductors Product specification Quad bilateral switches 74LVC4066 RECOMMENDED OPERATING CONDITIONS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V); see note 1. Notes 1. To avoid drawing VCC current out of terminal Z, when switch current flows in terminal Y, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into terminal Z, no VCC current will flow out of terminal Y. In this case there is no limit for the voltage drop across the switch, but the voltage at Y and Z may not exceed VCC or GND. 2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 3. For SO14 packages: above 70 °C derate linearly with 8 mW/K. For TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K. For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage 1.65 5.5 V VI input voltage 0 5.5 V VS switch voltage 0 VCC V Tamb operating ambient temperature −40 +125 °C tr, tf input rise and fall times VCC = 1.65 to 2.7 V 0 20 ns/V VCC = 2.7 to 5.5 V 0 10 ns/V SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +6.5 V VI input voltage note 2 −0.5 +6.5 V IIK input diode current VI < −0.5 V or VI >VCC + 0.5 V −−50 mA ISK switch diode current VI < −0.5 V or VI >VCC + 0.5 V −±50 mA VS switch voltage enable and disable mode −0.5 +6.5 V IS switch source or sink current −0.5 < VS <VCC + 0.5 V −±50 mA ICC, IGND VCC or GND current −±100 mA Tstg storage temperature −65 +150 °C Ptot power dissipation Tamb = −40 to +125 °C; note 3 − 500 mW |
同様の部品番号 - 74LVC4066PW |
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同様の説明 - 74LVC4066PW |
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