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データシートサーチシステム |
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データシートサーチシステム |
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2SK3019 データシート(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2SK3019 データシート(HTML) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2 / 5 page  Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage VDS VGS = 0V, ID = 10µA 30 V Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 1 µA Gate –Source leakage current IGSS VGS = ±20V, VDS = 0V ± 2 µA Gate Threshold Voltage VGS(th) VDS = 3V, ID =100µA 0.8 1.5 V VGS = 4V, ID =10mA 8 Ω Drain-Source On-Resistance RDS(on) VGS =2.5V,ID =1mA 13 Ω Forward Transconductance gFS VDS =3V, ID = 10mA 20 mS Dynamic Characteristics * Input Capacitance Ciss 13 pF Output Capacitance Coss 9 pF Reverse Transfer Capacitance Crss VDS =5V,VGS =0V,f =1MHz 4 pF Switching Characteristics * Turn-On Delay Time td(on) 15 ns Rise Time tr 35 ns Turn-Off Delay Time td(off) 80 ns Fall Time tf VGS =5V, VDD =5V, ID =10mA, R g=10Ω, RL=500Ω, 80 ns * These parameters have no way to verify. MOSFET ELECTRICAL CHARACTERISTICS a T =25 ℃ unless otherwise specified www.cj-elec.com 2 D,Apr,2015 |
同様の部品番号 - 2SK3019 |
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同様の説明 - 2SK3019 |
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