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ISL58831CRZ-T13 データシート(PDF) 10 Page - Intersil Corporation |
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ISL58831CRZ-T13 データシート(HTML) 10 Page - Intersil Corporation |
10 / 12 page ISL58831 10 FN7440.1 January 28, 2016 Submit Document Feedback Furthermore, the case-to-ambient thermal coefficient may not be known precisely. To assist in worst case conditions, it is possible to monitor the silicon temperature of the ISL58831 by forcing current into the ENABLE pin, which will then be at a voltage of VDD + VPN, where VPN is the forward biassed voltage of the ESD protection diode. Since ENABLE = HI is necessary for normal operation, the device can be operated as it would be in the real-life applications, while the temperature is monitored. The ISL58831 has been calibrated with a 1MΩ resistor to +10V connected in series with the ENABLE pin, which results in an input current of approximately 4.5µA. Figure 7 allows the silicon temperature to be determined directly. The graph shows the measured ENABLE pin to VDD pin differential voltage, which shows a linear voltage sensitivity of -2.26mV/°C. Users may wish to measure their specific part at +20°C (no warm-up) to allow for any statistical/process distribution, but the method is reliable and accurate. By applying this method to the ISL58831 in an actual application, users can measure the silicon temperature under all operating conditions to determine whether their thermal engineering is sufficient. The thermal resistance of the QFN24 is +140°C/W when tested on a standard JEDEC JESD51-3 (single layer) test board. When using a standard JEDEC JESD51-7 (four layer) test board, the thermal resistance is +112°C/W. Actual thermal resistance is highly dependent on circuit board layout considerations. Temperature Measurement Set-Up and Results Example: Measure ENABLE - VDD under coolest condition of VDD = 0V and VENABLE = 5V through 1MΩ. Suppose the result was 580mV at TAMBIENT = +20°C. Now measure ENABLE - VDD under the actual operating conditions. Suppose result (must be after thermal equilibrium has been reached) is 450mV, and the new ICC value is 100mA. Now one can calculate the temperature rise of (450 to 580)/ -2.26 = +57°C. Using the power dissipation of PW = (VDD * ICC) - (ICC * VDD), the JA of the application can be calculated. SILICON TEMPERATURE (°C) 0 25 125 150 75 600 550 450 400 350 300 250 500 50 100 ENA WITH 1MΩ TO +10V FIGURE 7. ISL58831 ON-CHIP THERMOMETER ENABLE VDD ISL58831 V 1M +10V +5V |
同様の部品番号 - ISL58831CRZ-T13 |
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同様の説明 - ISL58831CRZ-T13 |
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