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STGW75M65DF2 データシート(PDF) 4 Page - STMicroelectronics |
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STGW75M65DF2 データシート(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STGW75M65DF2, STGWA75M65DF2 4/17 DocID028695 Rev 2 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 1 mA 650 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 75 A 1.65 2.1 V VGE = 15 V, IC = 75 A, TJ = 125 °C 1.95 VGE = 15 V, IC = 75 A, TJ = 175 °C 2.1 VF Forward on-voltage IF = 75 A 2 V IF =75 A, TJ = 125 °C 1.75 IF = 75 A, TJ = 175 °C 1.6 VGE(th) Gate threshold voltage VCE = VGE, IC = 2 mA 5 6 7 V ICES Collector cut-off current VCE = 0 V, VCE = 650 V 25 µA IGES Gate-emitter leakage current VCE = 0 V, VGE= ± 20 V ±250 µA Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V - 6290 - pF Coes Output capacitance - 390 - Cres Reverse transfer capacitance - 136 - Qg Total gate charge VCC = 520 V, IC = 75 A, VGE = 15 V (see Figure 30: " Gate charge test circuit") - 225 - nC Qge Gate-emitter charge - 53 - Qgc Gate-collector charge - 87 - |
同様の部品番号 - STGW75M65DF2 |
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同様の説明 - STGW75M65DF2 |
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