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LM3146 データシート(PDF) 3 Page - National Semiconductor (TI) |
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LM3146 データシート(HTML) 3 Page - National Semiconductor (TI) |
3 / 6 page AC Electrical Characteristics Symbol Parameter Conditions Limits Units Min Typ Max NF Low Frequency Noise Figure f e 1 kHz VCE e 5V 325 dB IC e 100 mA RS e 1kX fT Gain Bandwidth Product VCE e 5V IC e 3 mA 300 500 MHz CEB Emitter to Base Capacitance VEB e 5V IE e 0 070 pF CCB Collector to Base Capacitance VCB e 5V IC e 0 037 pF CCI Collector to Substrate Capacitance VCI e 5V IC e 0 22 pF Low Frequency Small Signal Equivalent Circuit Characteristics hfe Forward Current Transfer Ratio f e 1 kHz VCE e 3V IC e 1 mA 100 hie Short Circuit Input Impedance f e 1 kHz VCE e 3V IC e 1 mA 35 kX hoe Open Circuit Output Impedance f e 1 kHz VCE e 3V IC e 1 mA 156 m mho hre Open Circuit Reverse Voltage f e 1 kHz VCE e 3V 18 x 10b4 Transfer Ratio IC e 1mA Admittance Characteristics Yfe Forward Transfer Admittance f e 1 MHz VCE e 3V IC e 1mA 31 b j 15 mmho Yie Input Admittance f e 1 MHz VCE e 3V IC e 1 mA 03 a j 004 mmho Yoe Output Admittance f e 1 MHz VCE e 3V IC e 1 mA 0001 a j 003 mmho Yre Reverse Transfer Admittance f e 1 MHz VCE e 3V IC e 1 mA (Note 3) mmho Note 1 The collector of each transistor is isolated from the substrate by an integral diode The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action To avoid undesired coupling between transistors the substrate terminal should be maintained at either dc or signal (ac) ground A suitable bypass capacitor can be used to establish a signal ground Note 2 If the transistors are forced into zener breakdown (V(BR)EBO) degradation of forward transfer current ratio (hFE) can occur Note 3 See curve 3 |
同様の部品番号 - LM3146 |
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同様の説明 - LM3146 |
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