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LM3146 データシート(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部品番号 LM3146
部品情報  LM3146 High Voltage Transistor Array
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メーカー  NSC [National Semiconductor (TI)]
ホームページ  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM3146 データシート(HTML) 3 Page - National Semiconductor (TI)

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AC Electrical Characteristics
Symbol
Parameter
Conditions
Limits
Units
Min
Typ
Max
NF
Low Frequency Noise Figure
f e 1 kHz VCE e 5V
325
dB
IC e 100 mA RS e 1kX
fT
Gain Bandwidth Product
VCE e 5V IC e 3 mA
300
500
MHz
CEB
Emitter to Base Capacitance
VEB e 5V IE e 0
070
pF
CCB
Collector to Base Capacitance
VCB e 5V IC e 0
037
pF
CCI
Collector to Substrate Capacitance
VCI e 5V IC e 0
22
pF
Low Frequency Small Signal Equivalent Circuit Characteristics
hfe
Forward Current Transfer Ratio
f e 1 kHz VCE e 3V IC e 1 mA
100
hie
Short Circuit Input Impedance
f e 1 kHz VCE e 3V IC e 1 mA
35
kX
hoe
Open Circuit Output Impedance
f e 1 kHz VCE e 3V IC e 1 mA
156
m
mho
hre
Open Circuit Reverse Voltage
f e 1 kHz VCE e 3V
18 x 10b4
Transfer Ratio
IC e 1mA
Admittance Characteristics
Yfe
Forward Transfer Admittance
f e 1 MHz VCE e 3V IC e 1mA
31 b j 15
mmho
Yie
Input Admittance
f e 1 MHz VCE e 3V IC e 1 mA
03 a j 004
mmho
Yoe
Output Admittance
f e 1 MHz VCE e 3V IC e 1 mA
0001 a j 003
mmho
Yre
Reverse Transfer Admittance
f e 1 MHz VCE e 3V IC e 1 mA
(Note 3)
mmho
Note 1
The collector of each transistor is isolated from the substrate by an integral diode The substrate must be connected to a voltage which is more negative
than any collector voltage in order to maintain isolation between transistors and provide normal transistor action To avoid undesired coupling between transistors
the substrate terminal should be maintained at either dc or signal (ac) ground A suitable bypass capacitor can be used to establish a signal ground
Note 2
If the transistors are forced into zener breakdown (V(BR)EBO) degradation of forward transfer current ratio (hFE) can occur
Note 3
See curve
3


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