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74AUC1G00GW データシート(PDF) 4 Page - NXP Semiconductors

部品番号 74AUC1G00GW
部品情報  Single 2-input NAND gate
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AUC1G00GW データシート(HTML) 4 Page - NXP Semiconductors

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2002 Nov 12
4
Philips Semiconductors
Preliminary specification
Single 2-input NAND gate
74AUC1G00
handbook, halfpage
MNA098
2
4
&
1
Fig.3 IEE/IEC logic symbol.
handbook, halfpage
MNA099
B
A
Y
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When VCC =0 (Powered-down mode), the output voltage can be 2.7 V in normal operation.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
0.8
2.7
V
VI
input voltage
0
2.7
V
VO
output voltage
active mode
0
VCC
V
VCC = 0 V; Power-down mode
0
2.7
V
Tamb
operating ambient temperature
−40
+85
°C
tr,tf (∆t/∆f)
input rise and fall times
0
20
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+3.6
V
IIK
input diode current
VI <0
−−50
mA
VI
input voltage
note 1
−0.5
+3.6
V
IOK
output diode current
VO >VCC or VO <0
−±50
mA
VO
output voltage
active mode; notes 1 and 2
−0.5
VCC + 0.5
V
Power-down mode; notes 1 and 2
−0.5
+3.6
V
IO
output source or sink current
VO =0toVCC
−±60
mA
ICC, IGND
VCC or GND current
−±100
mA
Tstg
storage temperature
−65
+150
°C
PD
power dissipation per package
for temperature range from
−40 to +85 °C
250
mW


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