データシートサーチシステム |
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LM363 データシート(PDF) 2 Page - National Semiconductor (TI) |
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LM363 データシート(HTML) 2 Page - National Semiconductor (TI) |
2 / 22 page Absolute Maximum Ratings (Note 5) If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage g 18V Differential Input Voltage g 10V Input Current g 20 mA Input Voltage Equal to Supply Voltage Reference and Sense Voltage g 25V Lead Temp (Soldering 10 sec) 300 C ESD rating to be determined LM363 Electrical Characteristics (Notes 1 and 2) LM363 Parameter Conditions Tested Design Units Typ Limit Limit (Note 3) (Note 4) FIXED GAIN (8-PIN) Input Offset Voltage Ge500 30 150 400 m V Ge100 50 250 700 m V Ge10 05 25 6 mV Input Offset Voltage Drift Ge500 1 4 m V C Ge100 2 8 m V C Ge10 20 75 m V C Gain Error Ge500 01 08 09 % (g10V Swing 2 kX Load) Ge100 007 07 08 % Ge10 005 06 07 % PROGRAMMABLE GAIN (16-PIN) Input Offset Voltage Ge1000 50 250 500 m V Ge100 100 450 900 m V Ge10 1 35 8 mV Input Offset Voltage Drift Ge1000 1 5 m V C Ge100 2 10 m V C Ge10 10 100 m V C Gain Error Ge1000 20 30 35 % (g10V Swing 2 kX Load) Ge100 01 07 08 % Ge10 06 20 23 % FIXED GAIN AND PROGRAMMABLE Gain Temperature Coefficient Ge1000 40 ppm C Ge500 20 ppm C Ge100 10 10 ppm C Gain Non-Linearity Ge10 100 001 003 004 % (g10V Swing 2 kX Load) Ge500 1000 001 005 006 % 2 |
同様の部品番号 - LM363 |
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同様の説明 - LM363 |
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