データシートサーチシステム |
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TP30 データシート(PDF) 2 Page - STMicroelectronics |
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TP30 データシート(HTML) 2 Page - STMicroelectronics |
2 / 6 page Symbol Parameter Value Unit Rth (j-l) Junction to leads 60 °C/W Rth (j-a) Junction to ambient on printed circuit with standard footprint dimension 100 °C/W THERMAL RESISTANCES Symbol Parameter VRM Stand-off voltage IRM Leakage current at stand-off voltage VR Continuous Reverse voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance ELECTRICAL CHARACTERISTICS (Tamb =25 °C) Symbol Parameter Value Unit P Power dissipation on infinite heatsink Tamb =50 °C3 W IPP Peak pulse current 10/1000 µs 8/20 µs 30 60 A ITSM Non repetitive surge peak on-state current tp = 20 ms 15 A I 2tI2t value for fusing tp = 20 ms 1 A 2s dV/dt Critical rate of rise of off-state voltage VRM 5 kV/ µs Tstg Tj Storage temperature range Maximum junction temperature - 55 to + 150 150 °C °C TL Maximum lead temperaturefor solderingduring 10s at 5mm for case 230 °C ABSOLUTE MAXIMUM RATINGS (Tamb =25 °C) TP30-xxx Series 2/6 |
同様の部品番号 - TP30 |
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同様の説明 - TP30 |
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