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データシートサーチシステム |
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データシートサーチシステム |
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2SD1377 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1377 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD1377 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) · High DC Current Gain : hFE= 2000(Min) @IC= 4A · Low Saturation Voltage · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
同様の部品番号 - 2SD1377 |
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同様の説明 - 2SD1377 |
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