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SMUN5312DW1T1G データシート(PDF) 3 Page - ON Semiconductor |
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SMUN5312DW1T1G データシート(HTML) 3 Page - ON Semiconductor |
3 / 10 page MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 www.onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA =25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB =50V, IE =0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE =50V, IB =0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC =0) IEBO − − 0.2 mAdc Collector-Base Breakdown Voltage (IC =10 mA, IE =0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 6) (IC = 2.0 mA, IB =0) V(BR)CEO 50 − − Vdc ON CHARACTERISTICS DC Current Gain (Note 6) (IC = 5.0 mA, VCE =10V) hFE 60 100 − Collector-Emitter Saturation Voltage (Note 6) (IC = 10 mA, IB = 0.3 mA) VCE(sat) − − 0.25 V Input Voltage (Off) (VCE = 5.0 V, IC = 100 mA) (NPN) (VCE = 5.0 V, IC = 100 mA) (PNP) Vi(off) − − 1.2 1.2 − − Vdc Input Voltage (On) (VCE = 0.2 V, IC = 5.0 mA) (NPN) (VCE = 0.2 V, IC = 5.0 mA) (PNP) Vi(on) − − 1.9 2.0 − − Vdc Output Voltage (On) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (Off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 15.4 22 28.6 k W Resistor Ratio R1/R2 0.8 1.0 1.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%. Figure 1. Derating Curve AMBIENT TEMPERATURE ( °C) 125 100 75 50 25 0 −25 −50 0 50 100 150 200 250 300 150 (1) (2) (1) SOT−363; 1.0 × 1.0 Inch Pad (2) SOT−563; Minimum Pad (3) SOT−963; 100 mm2, 1 oz. Copper Trace 350 400 (3) |
同様の部品番号 - SMUN5312DW1T1G |
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同様の説明 - SMUN5312DW1T1G |
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