データシートサーチシステム |
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SD12 データシート(PDF) 2 Page - Shanghai Semitech Semiconductor Co., Ltd |
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SD12 データシート(HTML) 2 Page - Shanghai Semitech Semiconductor Co., Ltd |
2 / 4 page SD03 SERIES Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Symbol Parameter Maximum Reverse Peak Pulse Current IPP VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM IT Test Current VBR Breakdown Voltage @ IT IF Forward Current VF Forward Voltage @ IF Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VRWM (V) IR(uA) @ VRWM VBR (V)@ IT (Note 1) IT VC (V) @ IPP=5 A* VC (V) @ Max IPP* IPP (A)* C@OV 1MHz (pF) Device Max Max Min Max mA Typ Max Max Typ SD03 3.3 40 4.0 6.5 1.0 9.0 10.9 20 500 SD05 5.0 10 6.2 7.3 1.0 9.8 14.5 20 350 SD12 12 1.0 13.3 15.75 1.0 19 25 12 150 *Surge current waveform per Figure 1. 1. VBR is measured with a pluse test current IT at an ambient temperature of 25℃. Fig1. Pulse Waveform Fig2. Power Derating |
同様の部品番号 - SD12 |
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同様の説明 - SD12 |
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