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SMUN5314DW1T1G データシート(PDF) 2 Page - ON Semiconductor

部品番号 SMUN5314DW1T1G
部品情報  Complementary Bias Resistor Transistors
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SMUN5314DW1T1G データシート(HTML) 2 Page - ON Semiconductor

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MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MUN5314DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
PD
187
256
1.5
2.0
mW
mW/°C
Thermal Resistance,
(Note 1)
Junction to Ambient
(Note 2)
RqJA
670
490
°C/W
MUN5314DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
PD
250
385
2.0
3.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
493
325
°C/W
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
RqJL
188
208
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
NSBC114YPDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C
(Note 1)
Derate above 25°C
(Note 1)
PD
357
2.9
mW
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
350
°C/W
NSBC114YPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C
(Note 1)
Derate above 25°C
(Note 1)
PD
500
4.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
250
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
NSBC114YPDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C
(Note 4)
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
PD
231
269
1.9
2.2
MW
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
540
464
°C/W
NSBC114YPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C
(Note 4)
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
PD
339
408
2.7
3.3
MW
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
369
306
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR−4 @ 500 mm2, 1 oz. copper traces, still air.


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