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2SC4617Q データシート(PDF) 1 Page - Yea Shin Technology Co., Ltd |
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2SC4617Q データシート(HTML) 1 Page - Yea Shin Technology Co., Ltd |
1 / 4 page DATA SHEET SEMICONDUCTOR http://www.yeashin.com 1 REV.02 20120703 2SC4617Q-R-S 1 BASE COLLECTOR 3 General Purpose Transistors NPN Silicon 2 EMITTER ! ! ! ! Absolute maximum ratings (Ta=25 °C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Parameter VCBO VCEO VEBO IC PC Tj Tstg 60 V V V A ˚C ˚C 50 7 0.15 W 0.15 150 −55~+150 Symbol Limits Unit ! ! ! ! Electrical characteristics (Ta=25 °C) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 50 7 − − 120 − − − − − − − − − − 180 2.0 − − − 0.1 0.1 560 0.5 − 3.5 VIC =50µA IC =1µA IE =50µA VCB =60V VEB =7V VCE =6V, IC=1mA IC/IB =50mA/5mA VCE =12V, IE=2mA, f=30MHz VCB =12V, IE=0A, f=1MHz V V µA µA − V MHz pF Typ. Max. Unit Conditions hFE values are classified as follows: Item Q R S hFE 120~270 180~390 270~560 ! ! ! !Device marking ! ! ! ! 2SC4617Q=BQ 2SC4617R=BR 2SC4617S=BS SC-89 1 2 3 H |
同様の部品番号 - 2SC4617Q |
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同様の説明 - 2SC4617Q |
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