MMBTH10Q datasheet(1/5 Pages) YEASHIN

部品番号	MMBTH10Q

部品情報	VHF/UHF Transistors

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メーカー	YEASHIN [Yea Shin Technology Co., Ltd]

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DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20120703

H

MMBTH10Q

VHF/UHF Transistors

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V

CEO

25

Vdc

Collector–Base Voltage

V

CBO

30

Vdc

Emitter–Base Voltage

V

EBO

3.0

Vdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

P

D

225

mW

T

A = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

Rθ

JA

556

°C/W

Total Device Dissipation

P

D

300

mW

Alumina Substrate, (2) T

A = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

Rθ

JA

417

°C/W

Junction and Storage Temperature

T

J , Tstg

–55 to +150

°C

DEVICE MARKING

MMBTH10QL = 3EQ

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

V

(BR)CEO

25

—

Vdc

(I

C = 1.0 mAdc, I B= 0 )

Collector–Base Breakdown Voltage

V

(BR)CBO

30

—

Vdc

(I

C = 100 µAdc , I E = 0)

Emitter–Base Breakdown Voltage

V

(BR)EBO

3.0

—

Vdc

(I

E = 10 µAdc , I C= 0)

Collector Cutoff Current

I

CBO

—

100

nAdc

( V

CB = 25Vdc , I E = 0 )

Emitter Cutoff Current

I

EBO

—

100

nAdc

( V

EB = 2.0Vdc , I C= 0 )

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2

EMITTER

3

COLLECTOR

1

BASE

SOT–23 (TO–236AB)

1

2

3

同様の部品番号 - MMBTH10Q

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