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TPS2660 データシート(PDF) 5 Page - Texas Instruments

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部品番号 TPS2660
部品情報  60-V, 2-A Industrial eFuse with Integrated Reverse Input Polarity Protection
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メーカー  TI1 [Texas Instruments]
ホームページ  http://www.ti.com
Logo TI1 - Texas Instruments

TPS2660 データシート(HTML) 5 Page - Texas Instruments

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TPS2660
www.ti.com
SLVSDG2A – JULY 2016 – REVISED AUGUST 2016
Product Folder Links: TPS2660
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (all voltages referred to GND (unless otherwise noted))
(1)
MIN
MAX
UNIT
IN , IN-OUT
Input voltage
–60
60
V
IN , IN-OUT (10 msec transient), TA = 25 °C
–70
70
V
[IN, OUT, FLT, UVLO, SHDN] to RTN
–0.3
60
V
[OVP, dVdT, ILIM, IMON, MODE] to RTN
–0.3
5
V
RTN
–60
0.3
V
IFLT, IdVdT, ISHDN
Sink current
10
mA
IdVdT, IILIM, IIMON
Source current
Internally limited
TJ
Operating junction temperature
–40
150
°C
Transient junction temperature
–65
T(TSD)
°C
Tstg
Storage temperature
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±1000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±250
7.3 Recommended Operating Conditions
over operating free-air temperature range (all voltages referred to GND (unless otherwise noted))
MIN
NOM
MAX
UNIT
IN
Input voltage
–55
55
V
UVLO, OUT, FLT
0
55
OVP, dVdT, ILIM, IMON, SHDN
0
4
ILIM
Resistance
5.36
120
IMON
1
IN, OUT
External capacitance
0.1
µF
dVdT
10
nF
– dV(IN)/dt
V(IN) falling slew rate
20
V/µs
TJ
Operating junction temperature
–40
25
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC(1)
TPS2660
UNIT
PWP (HTSSOP)
RHF (VQFN)
16 PINS
24 PINS
RθJA
Junction-to-ambient thermal resistance
38.6
30.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
22.7
20.8
°C/W
RθJB
Junction-to-board thermal resistance
18.2
7.6
°C/W
ψJT
Junction-to-top characterization parameter
0.5
0.2
°C/W
ψJB
Junction-to-board characterization parameter
18
7.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
1.5
1.7
°C/W


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