MMBTH10LT3G datasheet(2/5 Pages) ONSEMI

部品番号	MMBTH10LT3G

部品情報	VHF/UHF Transistor

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MMBTH10L, MMBTH10−4L, SMMBTH10−4L, NSVMMBTH10L

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

25

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 μAdc, IE = 0)

V(BR)CBO

30

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 μAdc, IC = 0)

V(BR)EBO

3.0

−

Vdc

Collector Cutoff Current

(VCB = 25 Vdc, IE = 0)

ICBO

−

100

nAdc

Emitter Cutoff Current

(VEB = 2.0 Vdc, IC = 0)

IEBO

−

100

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 4.0 mAdc, VCE = 10 Vdc)

MMBTH10LT1G, NSVMMBTH10LT1G

MMBTH10−4LT1G, SMMBTH10−4LT3G

hFE

60

120

−

240

−

Collector−Emitter Saturation Voltage

(IC = 4.0 mAdc, IB = 0.4 mAdc)

VCE(sat)

−

0.5

Vdc

Base−Emitter On Voltage

(IC = 4.0 mAdc, VCE = 10 Vdc)

VBE

−

0.95

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 Mhz)

MMBTH10LT1G, NSVMMBTH10LT1G

MMBTH10−4LT1G, SMMBTH10−4LT3G

fT

650

800

−

MHz

Collector−Base Capacitance

(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)

Ccb

−

0.7

pF

Common−Base Feedback Capacitance

(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)

Crb

−

0.65

pF

Collector Base Time Constant

(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)

rb

′Cc

−

9.0

ps

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

同様の部品番号 - MMBTH10LT3G

メーカー	部品番号	データシート	部品情報
ON Semiconductor	MMBTH10LT3G	128Kb / 5P	VHF/UHF Transistor August, 2009 ??Rev. 3

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