MJ15002G datasheet(2/4 Pages) ONSEMI

部品番号	MJ15002G

部品情報	Complementary Silicon Power Transistors

Download	4 Pages

Scroll/Zoom	100%

メーカー	ONSEMI [ON Semiconductor]

ホームページ	http://www.onsemi.com

Logo

2 / 4 page

MJ15001 (NPN), MJ15002 (PNP)

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC, = 200 mAdc, IB = 0)

VCEO(sus)

140

−

Vdc

Collector Cutoff Current

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

ICEX

−

100

2.0

mAdc

Collector Cutoff Current

(VCE = 140 Vdc, IB = 0)

ICEO

−

250

mAdc

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

IEBO

−

100

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 40 Vdc, t = 1 s (non−repetitive))

(VCE = 100 Vdc, t = 1 s (non−repetitive))

IS/b

5.0

0.5

−

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 4 Adc, VCE = 2 Vdc)

hFE

25

150

−

Collector−Emitter Saturation Voltage

(IC = 4 Adc, IB = 0.4 Adc)

VCE(sat)

−

1.0

Vdc

Base−Emitter On Voltage

(IC = 4 Adc, VCE = 2 Vdc)

VBE(on)

−

2.0

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)

fT

2.0

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Cob

−

1000

pF

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

5

Figure 1. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5

7

10

200

10

2

3

50 70 100

20

30

7

200

1

3

0.5

0.2

0.7

0.3

TC = 25°C

TJ = 200°C

BONDING WIRE LIMITED

THERMAL LIMITATION (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED VCEO

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 1 is based on TJ (pk) = 200°C; TC is

variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by

second breakdown.

同様の部品番号 - MJ15002G

メーカー	部品番号	データシート	部品情報
ON Semiconductor	MJ15002G	71Kb / 4P	Complementary Silicon Power Transistors December, 2005 ??Rev. 4

More results

同様の説明 - MJ15002G

メーカー	部品番号	データシート	部品情報
Motorola, Inc	D44E	84Kb / 2P	COMPLEMENTARY SILICON POWER TRANSISTORS
STMicroelectronics	MJE172	52Kb / 4P	COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor	D44H	68Kb / 5P	Complementary Silicon Power Transistors February, 2006 ??Rev. 9
STMicroelectronics	TIP31A	64Kb / 5P	COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor	TIP33B	102Kb / 4P	COMPLEMENTARY SILICON POWER TRANSISTORS 1996 REV 1
	MJE4343	142Kb / 6P	POWER TRANSISTORS COMPLEMENTARY SILICON 1998
	MJF15030	246Kb / 6P	COMPLEMENTARY SILICON POWER TRANSISTORS 1995
STMicroelectronics	BD235	75Kb / 5P	COMPLEMENTARY SILICON POWER TRANSISTORS
	BD241A	66Kb / 4P	COMPLEMENTARY SILICON POWER TRANSISTORS June 1997
	BD243B	34Kb / 4P	COMPLEMENTARY SILICON POWER TRANSISTORS September 1999
Motorola, Inc	TIP35A	157Kb / 6P	COMPLEMENTARY SILICON POWER TRANSISTORS